Professor Ilesanmi Adesida
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Our group investigates the processing of semiconductors and other materials at the nanometer scale level and applies these techniques to the realization of ultra-high speed optoelectronic devices and circuits. Electron beam lithography with novel resist materials coupled with various dry etching methods are used to achieve nanoscale patterning. The impact of processing at these dimensions are investigated on the performance of heterostructure field effect transistors, photonic, and other quantum effect devices in compound semiconductor materials such as Indium Phosphide, Gallium Nitride, and Silicon Germanium. The Group conducts research on various aspects of the fabrication of these devices including ohmic contact formation, Schottky contact formation, isolation methods. Micro/nano analytical methods are utilized to investigate material conditions needed to achieve optimum processes. Recent thrusts for the nanofabrication work are in the application area of biochemical nanotechnologies.

 

 

 

 

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