Nanoscale Processing and Devices Group

Title	Conference	Speaker
Processing and Device Issues in GaN and Related Compounds		Ilesanmi Adesida
Ohmic Contacts to (Al)GaN Semiconductors (Invited)	MRS, Fall 2003	Ilesanmi Adesdia
Long Wavelength Metamorphic InGaAs Detectors on GaAs Substrates		Ilesanmi Adesida
Development of In_0.53Ga_0.47As/In_0.52Al_0.48As E/D-HEMT Technology for High Speed Circuits		Ilesanmi Adesida
Processing Technologies for AlGaN/GaN HEMTs		Ilesanmi Adesida
Sidewall Roughness of Optical Waveguides and its Impact on Radiation Loss		Jae-Hyung Jang
Sidewall Roughness of Optical Waveguides		Ilesanmi Adesida
Processing Technologies for Al_xGa_1-xN Photodector Arrays		Ilesanmi Adesida
Monlithic Integration of InAlAs/InGaAs E/D-Mode Metamorphic HEMTs on GaAs Substrates		D.C Dumka
Ultra-High Frequency and Ultra-High Power AlGaN/(In)GaN Power Transistors and Amplifiers		Ilesanmi Adesida
Fabrication and Characterization of High Performance GaN-based HEMTs		Wu Lu
Dependance of AlGaN/GaN HFETs Performance on Aluminum Concentration		Wu Lu
Ultra-High Speed InP-Based E/D HEMT ADCs		Patrick Fay